Keyword : subthreshold swing


Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 463-467
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETsubthreshold swingaging characteristicgrain size
 Summary | Full Text:PDF(1.1MB)

L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications
Sang Wan KIM Woo Young CHOI Min-Chul SUN Hyun Woo KIM Jong-Ho LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 634-638
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
L-shaped TFETssubthreshold swingsteep slopecomplementary logic function
 Summary | Full Text:PDF(2.8MB)

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer
Dong Seup LEE Hong-Seon YANG Kwon-Chil KANG Joung-Eob LEE Jung Han LEE Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 540-545
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Multi-Gate Technology
Keyword: 
tunnel field-effect transistorsubthreshold swing
 Summary | Full Text:PDF(3.5MB)