IEICE Trans

Keyword : substrate bias

Buffer Layer Doping Concentration Measurement Using V_T-V_SUB Characteristics of GaN HEMT with p-GaN Substrate Layer Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 ; pp. 1234-1237 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: GaN-based Devices Keyword: AlGaN/GaN HFET, V_T-V_SUB, substrate bias, p-GaN, SIMS,
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RF MOSFET Characterization by Four-Port Measurement Shih-Dao WU Guo-Wei HUANG Kun-Ming CHEN Hua-Chou TSENG Tsun-Lai HSU Chun-Yen CHANG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/05/01 Vol. E88-C No. 5 ; pp. 851-856 Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures) Category: Keyword: 4-port, RF MOSFET, common source, common gate, common drain, substrate bias,
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CMOS Zero-Temperature-Coefficient Point Voltage Reference with Variable-Output-Voltage Level Hidetoshi IKEDA Kawori TAKAKUBO Hajime TAKAKUBO
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2005/02/01 Vol. E88-A No. 2 ; pp. 476-482 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics) Category: Keyword: voltage reference, zero-temperature-coefficient point, variable-reference-voltage level, substrate bias, CMOS,
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Variable Threshold-Voltage CMOS Technology Tadahiro KURODA Tetsuya FUJITA Fumitoshi HATORI Takayasu SAKURAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/11/25 Vol. E83-C No. 11 ; pp. 1705-1715 Type of Manuscript: INVITED PAPER (Special Issue on Low-power LSIs and Technologies) Category: Keyword: low power CMOS design, low voltage, threshold voltage, substrate bias,
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Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects Rimon IKENO Hiroshi ITO Kunihiro ASADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 ; pp. 806-811 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: SOI MOSFET, device simulation, subthreshold characteristics, quantum mechanical effects, parameter fitting, substrate bias,
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The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film Hitoshi SUMIDA Atsuo HIRABAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/25 Vol. E77-C No. 9 ; pp. 1464-1471 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: SOI, lateral IGBT, substrate bias, blocking capability, switching characteristics,
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