Keyword : single-electron tunneling

Improvement of Single-Electron Digital Logic Gates by Utilizing Input Discretizers
Tran THI THU HUONG Hiroshi SHIMADA Yoshinao MIZUGAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/02/01
Vol. E99-C  No. 2 ; pp. 285-292
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
coulomb blockade, four-junction inverter, input discretizer, single-electron tunneling, 
 Summary | Full Text:PDF(1.1MB)
Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors
Andreas SCHOLZE Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1242-1246
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
single-electron tunneling, Coulomb blockade, conductance oscillations, transfer Hamiltonian formalism, 
 Summary | Full Text:PDF(963.9KB)
A Simple Digital-to-Analog Conversion Technique Using Single-Electron Transistor
Su Jin AHN Dae Mann KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 608-611
Type of Manuscript:  LETTER
Category: Quantum Electronics
Keyword: 
single-electron tunneling, Coulomb blockade, digital-to-analog data conversion, 
 Summary | Full Text:PDF(331.5KB)
A Stochastic Associative Memory Using Single-Electron Tunneling Devices
Makoto SAEN Takashi MORIE Makoto NAGATA Atsushi IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/01/25
Vol. E81-C  No. 1 ; pp. 30-35
Type of Manuscript:  Special Section PAPER (Special Issue on Technology Challenges for Single Electron Devices)
Category: 
Keyword: 
associative memory, single-electron tunneling, SET, single-electron transistor, 
 Summary | Full Text:PDF(478.9KB)