IEICE Trans

Keyword : silicon

High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region Koichi IIYAMA Takeo MARUYAMA Ryoichi GYOBU Takuya HISHIKI Toshiyuki SHIMOTORI
Publication: Publication Date: 2018/07/01 Vol. E101-C No. 7 ; pp. 574-580 Type of Manuscript: INVITED PAPER (Special Section on Distinguished Papers in Photonics) Category: Keyword: silicon, photodiode, avalanche photodiode, CMOS, blu-ray,
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Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation Zul Atfyi Fauzan Mohammed NAPIAH Ryoichi GYOBU Takuya HISHIKI Takeo MARUYAMA Koichi IIYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/12/01 Vol. E99-C No. 12 ; pp. 1304-1311 Type of Manuscript: PAPER Category: Lasers, Quantum Electronics Keyword: photodiode, avalanche photodiode, CMOS process, silicon,
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Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics Ryoichi ISHIHARA Jin ZHANG Miki TRIFUNOVIC Jaber DERAKHSHANDEH Negin GOLSHANI Daniel M. R. TAJARI MOFRAD Tao CHEN Kees BEENAKKER Tatsuya SHIMODA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/04/01 Vol. E97-C No. 4 ; pp. 227-237 Type of Manuscript: INVITED PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology) Category: Keyword: silicon, thin-film transistor, 3D-ICs, excimer-laser, crystallization, SRAM, image sensor, flexible electronics,
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Enhancement of Light Emission from Silicon by Utilizing Photonic Nanostructures Satoshi IWAMOTO Yasuhiko ARAKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/02/01 Vol. E95-C No. 2 ; pp. 206-212 Type of Manuscript: INVITED PAPER (Special Section on Photonic Devices using Nanofabrication Technology and Their Applications) Category: Keyword: photonic nanostructures, photonic crystals, nanocavity, Purell effect, silicon, light emission, LED,
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Silicon Mach-Zehnder Waveguide Interferometer on Silicon-on-Silicon (SOS) Substrate Incorporating the Integrated Three-Terminal Field-Effect Device as an Optical Signal Modulation Structure Ricky W. CHUANG Mao-Teng HSU Shen-Horng CHOU Yao-Jen LEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/07/01 Vol. E94-C No. 7 ; pp. 1173-1178 Type of Manuscript: Special Section PAPER (Joint Special Section on Opto-electronics and Communications for Future Optical Network) Category: Keyword: carrier injection, spreading resistance probe (SRP), modulation depth, spin-on-dopants (SOD), silicon, field-effect transistor, and modulator,
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Polymorphous Silicon: A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays Francois TEMPLIER Julien BROCHET Bernard AVENTURIER David COOPER Alexey ABRAMOV Dmitri DAINEKA Pere ROCA i CABARROCAS
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/10/01 Vol. E93-C No. 10 ; pp. 1490-1494 Type of Manuscript: INVITED PAPER (Special Section on Frontier of Thin-Film Transistor Technology) Category: Keyword: thin-film transistors, polymorphous, silicon, OLED,
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Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures Tamotsu NISHINO Masatake HANGAI Yukihisa YOSHIDA Sang-Seok LEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/07/01 Vol. E93-C No. 7 ; pp. 1111-1118 Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies) Category: Keyword: micromachine, MEMS, hollow waveguides, GCPW, filters, hybrids, MEMS switches, silicon,
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Analog Pre-Distortion Linearizer Using Self Base Bias Controlled Amplifier Shintaro SHINJO Kazutomi MORI Keiki YAMADA Noriharu SUEMATSU Mitsuhiro SHIMOZAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/07/01 Vol. E93-C No. 7 ; pp. 966-974 Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies) Category: Keyword: distortion, envelope, linearizer, microwave, power amplifier, silicon,
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A Flexible Microwave De-Embedding Method for On-Wafer Noise Parameter Characterization of MOSFETs Yueh-Hua WANG Ming-Hsiang CHO Lin-Kun WU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/09/01 Vol. E92-C No. 9 ; pp. 1157-1162 Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications) Category: Keyword: de-embedding, microwave, MOSFETs, noise, RF, silicon,
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Avalanche Amplification in Silicon Lateral Photodiode Fabricated by Standard 0.18 µm CMOS Process Koichi IIYAMA Noriaki SANNOU Hideki TAKAMATSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/11/01 Vol. E91-C No. 11 ; pp. 1820-1823 Type of Manuscript: LETTER Category: Lasers, Quantum Electronics Keyword: photodiode, silicon, CMOS process, avalanche gain,
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The Impact of Silicon Photonics Richard SOREF
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/02/01 Vol. E91-C No. 2 ; pp. 129-130 Type of Manuscript: INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications) Category: Keyword: silicon, optoelectronics, integrated photonics,
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Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate Gong-Ru LIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/02/01 Vol. E91-C No. 2 ; pp. 173-180 Type of Manuscript: INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications) Category: Keyword: Si-ion-implantation, PECVD, nanocrystal, silicon, Si-rich SiO_x, nano-pyramids, nano-pillars, MOSLED, electroluminescence, Fowler-Nordheim tunneling,
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A Cascade Open-Short-Thru (COST) De-Embedding Method for Microwave On-Wafer Characterization and Automatic Measurement Ming-Hsiang CHO Guo-Wei HUANG Chia-Sung CHIU Kun-Ming CHEN An-Sam PENG Yu-Min TENG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/05/01 Vol. E88-C No. 5 ; pp. 845-850 Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures) Category: Keyword: automatic measurement, cascade configuration, on-wafer de-embedding, silicon, S-parameters,
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In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations Christoph JUNGEMANN Bernd MEINERZHAGEN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 314-319 Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: silicon, noise, drift-diffusion, hydrodynamic, Monte Carlo,
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The Process Modeling Hierarchy: Connecting Atomistic Calculations to Nanoscale Behavior Scott T. DUNHAM Pavel FASTENKO Zudian QIN Milan DIEBEL
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 276-283 Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: atomistic, diffusion, activation, doping fluctuations, silicon,
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Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances Belinda PIERNAS Kenjiro NISHIKAWA Kenji KAMOGAWA Ichihiko TOYODA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/07/01 Vol. E85-C No. 7 ; pp. 1394-1403 Type of Manuscript: INVITED PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies) Category: Keyword: three-dimensional, MMIC, silicon, masterslice, single-chip transceiver,
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Silicon Planar Esaki Diode Operating at Room Temperature Junji KOGA Akira TORIUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/08/01 Vol. E84-C No. 8 ; pp. 1051-1055 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Nanodevices) Category: Keyword: planar Esaki diode, silicon, interband tunnel effect, negative differential conductance, phonon-assisted tunneling,
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3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon Vincent SENEZ Jerome HERBAUX Thomas HOFFMANN Evelyne LAMPIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-C No. 8 ; pp. 1267-1274 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Process Modeling and Simulation Keyword: diffusion, finite element, three-dimensional, gear scheme, point-defects, silicon,
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Efficient Full-Band Monte Carlo Simulation of Silicon Devices Christoph JUNGEMANN Stefan KEITH Martin BARTELS Bernd MEINERZHAGEN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 870-879 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: silicon, full-band Monte Carlo, microscopic relaxation time, velocity overshoot, impact ionization, drift-diffusion, deep submicron NMOSFET,
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Modeling of Dopant Diffusion in Silicon Scott T. DUNHAM Alp H. GENCER Srinivasan CHAKRAVARTHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 800-812 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: dopant diffusion, point defects, silicon, interstitial, vacancy, dopant/defect pairing, coupled diffusion, pair diffusion, diffusivity, equilibrium concentration, metal diffusion, lattice Monte Carlo,
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Fabrication of Silicon Quantum Wires and Dots Yoshihiko HIRAI Kiyoshi MORIMOTO Masaaki NIWA Koichiro YUKI Juro YASUI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/25 Vol. E77-C No. 9 ; pp. 1426-1430 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques) Category: Keyword: silicon, quantum wire, quantum dot, anisotropic etching,
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Highly Reliable Flash Memories Fabricated by in-situ Multiple Rapid Thermal Processing Takahisa HAYASHI Yoshiyuki KAWAZU Akira UCHIYAMA Hisashi FUKUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/08/25 Vol. E77-C No. 8 ; pp. 1270-1278 Type of Manuscript: Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories) Category: Non-volatile Memory Keyword: electrically erasable programmable read-only memory, metal-oxide-semiconductor structures, silicon, insulating materials and insulators, polysilicon,
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Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation Hisako SATO Katsumi TSUNENO Hiroo MASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-C No. 2 ; pp. 106-111 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Process Simulation Keyword: transient enhanced diffusion, two-dimension, phosphorus, silicon, shallow junction, furnace annealing,
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Initial Stage of SiO₂/Si Interface Formation on Si(111) Surface Hiroshi NOHIRA Yoshinari TAMURA Hiroki OGAWA Takeo HATTORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/07/25 Vol. E75-C No. 7 ; pp. 757-763 Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology) Category: Keyword: oxidation, silicon, H-termination, XPS,
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Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces Hiroki OGAWA Takeo HATTORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/07/25 Vol. E75-C No. 7 ; pp. 774-780 Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology) Category: Keyword: chemical structure, silicon, native oxide, H-termination, XPS,
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Reaction of H-Terminated Si(100) Surfaces with Oxidizer in the Heating and Cooling Process Norikuni YABUMOTO Yukio KOMINE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/07/25 Vol. E75-C No. 7 ; pp. 770-773 Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology) Category: Keyword: silicon, surface, oxidation, hydrogen-termination, thermal desorption spectroscopy,
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1/5 Power Law in PN-Junction Failure Mechanism Caused by Electrical-Over-Stress Yutaka TAJIMA Kunihiro ASADA Takuo SUGANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/02/25 Vol. E75-C No. 2 ; pp. 207-215 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD) Category: Keyword: reliability, failure, pn-junction, silicon, electrostatic-discharge,
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