Keyword : silicon dioxide


Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE
Lucia SCOZZOLI Susanna REGGIANI Massimo RUDAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1183-1188
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
semiconductor materials and devicessilicon dioxideBoltzmann equationspherical-harmonics expansion
 Summary | Full Text:PDF(719.3KB)

Fabrication of Silicon Dioxide Electrets by Plasma CVD Process for Microsystems, and Evaluation of Their Long-Term Charge Stability
Mitsuo ICHIYA Takuro NAKAMURA Shuji NAKATA Jacques LEWINER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/01/25
Vol. E80-C  No. 1 ; pp. 174-183
Type of Manuscript:  PAPER
Category: Components
Keyword: 
microsystemssensorsactuatorselectrostatic fieldelectretsilicon dioxidecharge stabilitythermally stimulated current
 Summary | Full Text:PDF(545.7KB)

The Long-Term Charge Storage Mechanism of Silicon Dioxide Electrets for Microsystems
Mitsuo ICHIYA Takuro NAKAMURA Shuji NAKATA Jacques LEWINER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/10/25
Vol. E79-C  No. 10 ; pp. 1462-1466
Type of Manuscript:  PAPER
Category: Materials
Keyword: 
electretsilicon dioxideplasma chemical vapor depositioncharge stabilitythermally stimulated currentelectron spin resonance
 Summary | Full Text:PDF(459.6KB)

Electrostatic Actuator with Electret
Mitsuo ICHIYA Fumihiro KASANO Hiromi NISHIMURA Jacques LEWINER Didier PERINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2 ; pp. 128-131
Type of Manuscript:  Special Section PAPER (Special Issue on Micromachines and Micro Electro Mechanical Systems)
Category: 
Keyword: 
electrostatic actuatorelectretsilicon dioxiderelaylatching
 Summary | Full Text:PDF(387.6KB)

Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors
Makoto TAKIYAMA Susumu OHTSUKA Tadashi SAKON Masaharu TACHIMORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 464-472
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
silicon dioxidedielectric breakdownmetal contaminationmagnesiumzinc
 Summary | Full Text:PDF(724.5KB)