Keyword : silicon carbide (SiC)


Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation
Yingzhe WU Hui LI Wenjie MA Dingxin JIN 
Publication:   
Publication Date: 2019/09/01
Vol. E102-C  No. 9 ; pp. 646-657
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
silicon carbide (SiC)MOSFETanalytical modellingelectromagnetic interference (EMI)
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Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
Doohyung CHO Kunsik PARK Jongil WON Sanggi KIM Kwansgsoo KIM 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 439-445
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon carbide (SiC)junction termination extension (JTE)edge terminationpower device
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Current Status and Future Prospects of SiC Power JFETs and ICs
Jian H. ZHAO Kuang SHENG Yongxi ZHANG Ming SU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1031-1041
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
silicon carbide (SiC)junction field-effect transistor (JFET)power integrated circuitsnormally offhigh temperature electronics
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