Keyword : silicide


PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process
Shun-ichiro OHMI Yuya TSUKAMOTO Weiguang ZUO Yasushi MASAHIRO 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5 ; pp. 311-316
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PdEr-alloy targetsilicideschottky barrier heightcontact resistivityRF magnetron sputtering
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Fabrication of β-FeSi2 Films on Si(111) Using Solid-Phase Growth Reaction from Fe and FeSi Sources
Katsuaki MOMIYAMA Kensaku KANOMATA Shigeru KUBOTA Fumihiko HIROSE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 690-693
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
β-FeSi2silicidesolid phase growthRHEED
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Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
Masafumi TSUTSUI Toshiaki NAGAI Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1191-1199
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
vertical transistorSchottky barrierSchottky source/drain transistorPtSisilicide
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A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process
Kikuo ONO Takashi SUZUKI Hiroki SAKUTA Kenichi ONISAWA Minoru HIROSHIMA Tooru SASAKI Makoto TSUMURA Nobutake KONISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/08/25
Vol. E79-C  No. 8 ; pp. 1097-1102
Type of Manuscript:  Special Section PAPER (Special Issue on Liquid-Crystal Displays)
Category: 
Keyword: 
silicideamorphous siliconthin film transistorsliquid crystal display
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