Keyword : sheet resistance

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation
Akira HEYA Naoto MATSUO Kazuhiro KANDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/04/01
Vol. E99-C  No. 4 ; pp. 474-480
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
boron dopant, low-temperature activation, soft X-ray irradiation, sheet resistance, electron excitation, depth profile, 
 Summary | Full Text:PDF
A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET
Takashi OHZONE Kazuhiko OKADA Takayuki MORISHITA Kiyotaka KOMOKU Toshihiro MATSUDA Hideyuki IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/09/01
Vol. E89-C  No. 9 ; pp. 1351-1357
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
CMOSFET, LDD-type, source/drain-resistance, sheet resistance, 
 Summary | Full Text:PDF
Ultra-Shallow Junction Formation with Antimony Implantation
Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1091-1097
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
shallow junction, antimony, dopant loss, dopant pile-up, sheet resistance, 
 Summary | Full Text:PDF