Keyword : shallow-junction


Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)
Yukihiro KIYOTA Tohru NAKAMURA Taroh INADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 362-366
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
PMOSFETRVDshallow-junction
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