Keyword : shallow-junction bipolar


Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications
Yukihiro KIYOTA Tohru NAKAMURA Seiji SUZUKI Taroh INADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 554-559
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
RVDshallow-junction bipolarMOS
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