Keyword : shallow junction


An Application of Laser Annealing Process in Low-Voltage Planar Power MOSFETs
Yi CHEN Tatsuya OKADA Takashi NOGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5 ; pp. 601-603
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
low-voltage power MOSFETslaser annealingshallow junctionthreshold-voltage variationelectrical characteristics
 Summary | Full Text:PDF(569KB)

An Application of Laser Annealing Process in Low-Voltage Power MOSFETs
Yi CHEN Tatsuya OKADA Takashi NOGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5 ; pp. 516-521
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
power MOSFETslaser annealingshallow junctionelectrical characteristics
 Summary | Full Text:PDF(1MB)

Ultra-Shallow Junction Formation with Antimony Implantation
Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1091-1097
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
shallow junctionantimonydopant lossdopant pile-upsheet resistance
 Summary | Full Text:PDF(714.3KB)

Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation
Hisako SATO Katsumi TSUNENO Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 106-111
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
transient enhanced diffusiontwo-dimensionphosphorussiliconshallow junctionfurnace annealing
 Summary | Full Text:PDF(517.8KB)

A Novel CMOS Structure with Polysilicon Source/Drain (PSD) Transistors by Self-Aligned Silicidation
Masahiro SHIMIZU Takehisa YAMAGUCHI Masahide INUISHI Katsuhiro TSUKAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 532-540
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
MOS transistorshallow junctionsalicidetitanium
 Summary | Full Text:PDF(803.6KB)