Keyword : series-connected MOS structure

The Effect of Internal Parasitic Capacitances in Series-Connected MOS Structure
Sang Heon LEE Song Bai PARK Kyu Ho PARK 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1995/01/25
Vol. E78-A  No. 1 ; pp. 142-145
Type of Manuscript:  LETTER
Category: VLSI Design Technology
computer aided design (CAD)modeling and simulationparasitic capacitancedelay modelseries-connected MOS structure
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