Keyword : semiconductor materials and devices


Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE
Lucia SCOZZOLI Susanna REGGIANI Massimo RUDAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1183-1188
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
semiconductor materials and devicessilicon dioxideBoltzmann equationspherical-harmonics expansion
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Test Structures and a Modified Transmission Line Pulse System for the Study of Electrostatic Discharge
Robert A. ASHTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 158-164
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
integrated electronicssemiconductor materials and devicesESDtest structuresreliability
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High Fmax AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au Base Contacts for DC to 40 GHz Broadband Amplifiers
Tohru SUGIYAMA Yasuhiko KURIYAMA Norio IIZUKA Kunio TSUDA Kouhei MORIZUKA Masao OBARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8 ; pp. 944-948
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
semiconductor materials and devicesHBTamplifierbase metal
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Application of Ferroelectric Thin Films to Si Devices
Koji ARITA Eiji FUJII Yasuhiro SHIMADA Yasuhiro UEMOTO Masamichi AZUMA Shinichiro HAYASHI Toru NASU Atsuo INOUE Akihiro MATSUDA Yoshihisa NAGANO Shin-ich KATSU Tatsuo OTSUKI Gota KANO Larry D. McMILLAN Carlos A. Paz de ARAUJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 392-398
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
semiconductor materials and devicesmaterialsintegrated electronicsrecording and memory technologies
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On the Origin of Tunneling Currents in Scaled Silicon Devices
Andreas SCHENK Ulrich KRUMBEIN Stephan MÜLLER Hartmut DETTMER Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 148-154
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
integrated electronicssemiconductor materials and devicesquantum electronics
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New Insights in Optimizing CMOS Inverter Circuits with Respect to Hot-Carrier Degradation
Peter M. LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 194-199
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Coupled Device & Circuit Modeling
Keyword: 
integrated electronicselectronic circuitssemiconductor materials and devices
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A 10 GHz MMIC Predistortion Linearizer Fabricated on a Single Chip
Nobuaki IMAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/12/25
Vol. E76-C  No. 12 ; pp. 1847-1850
Type of Manuscript:  LETTER
Category: Microwave and Millimeter Wave Technology
Keyword: 
microwave and millimeter wave technologysemiconductor materials and devices
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Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes
Makoto FUKUSHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1420-1422
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
semiconductor materials and devicesQWITT diodefield-dependent diffusion coefficientvelocity transient effect
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An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4-µm Gate Ultrathin-Film SIMOX Technology
Yuichi KADO Masao SUZUKI Keiichi KOIKE Yasuhisa OMURA Katsutoshi IZUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 562-571
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
integrated electronicssemiconductor materials and devicesCMOSSOISIMOXphase locked loop
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Low Temperature Poly Si TFT and Liquid Crystal Polymer Composite for Brighter Video Projection System
Masanori YUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/01/25
Vol. E76-C  No. 1 ; pp. 86-89
Type of Manuscript:  INVITED PAPER (Special Issue on Opto-Electronics and LSI)
Category: LSI Technology for Opto-Electronics
Keyword: 
semiconductor materials and deviceselectronic displaysmaterials
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Modeling Three Dimensional Effects in CMOS Latch-up
Abhijit BANDYOPADHYAY A. B. BHATTACHARYYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/08/25
Vol. E75-C  No. 8 ; pp. 943-952
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
intergrated electronicssemiconductor materials and devices
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2D Simulation of Particle Formation, Growth, and Deposition in Low-Pressure CVDs: Application of CONTAMINATE Version 2.0
Evan WHITBY Koichi TSUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7 ; pp. 852-859
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
semiconductor materials and devicesmaterialsparticle dynamicswafer contamination
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