Keyword : selective epitaxy


SiGe-HBTs for Bipolar and BICMOS-Applications: From Research to Ramp up of Production
Konrad WOLF Wolfgang KLEIN Norbert ELBEL Adrian BERTHOLD Sonja GRONDAHL Thomas HUTTNER Stefan DREXL Rudolf LACHNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1399-1407
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
SiGeselective epitaxybipolarBICMOS
 Summary | Full Text:PDF

Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy
Shuji ITO Toshiyuki NAKAMURA Hiroshi HOGA Satoshi NISHIKAWA Hirokazu FUJIMAKI Yumiko HIJIKATA Yoshihisa OKITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 526-530
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
bipolar transistorSiGe HBTdoping level inversioncutoff frequencyselective epitaxy
 Summary | Full Text:PDF

Selective Growth of GaAs by Pulsed-Jet Epitaxy
Yoshiki SAKUMA Shunich MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1414-1419
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
selective epitaxyatomic layer epitaxy (ALE)MOVPEpulsed-jet epitaxyGaAsSiO2 mask
 Summary | Full Text:PDF

High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology
Hirokazu FUJIMAKI Kenichi SUZUKI Yoshio UMEMURA Koji AKAHANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 577-581
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
intergrated electronicsbipolar transistorLSIselective epitaxyself-alignmentSIC
 Summary | Full Text:PDF