Keyword : selective epitaxial growth


Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si
Sungbong PARK Yasuhiko ISHIKAWA Tai TSUCHIZAWA Toshifumi WATANABE Koji YAMADA Sei-ichi ITABASHI Kazumi WADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C  No. 2 ; pp. 181-186
Type of Manuscript:  Special Section PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: 
Keyword: 
Ge-on-Si photodetectorselective epitaxial growthUHV-CVDpost-growth annealingmorphological instability
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DC and AC Performances in Selectively Grown SiGe-Base HBTs
Katsuya ODA Eiji OHUE Masamichi TANABE Hiromi SHIMAMOTO Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 2013-2020
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
SiGe HBTUHV/CVDselective epitaxial growthGe profilecurrent gaincutoff frequency
 Summary | Full Text:PDF

7-Mask Self-Aligned SiGe Base Bipolar Transistors with fT of 80 GHz
Tsutomu TASHIRO Takasuke HASHIMOTO Fumihiko SATO Yoshihiro HAYASHI Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5 ; pp. 707-713
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
bipolar transistorsilicon-germanium baseselective epitaxial growthCMPtrench isolationfT
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