Keyword : salicide


Uniform Raised-Salicide Technology for High-Performance CMOS Devices
Hitoshi WAKABAYASHI Takeshi ANDOH Tohru MOGAMI Toru TATSUMI Takemitsu KUNIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1104-1110
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
complementary metal oxide semiconductorsalicideraised salicidesilicon selective epitaxial growthpit
 Summary | Full Text:PDF(2MB)

A Cell Synthesis Method for Salicide Process Using Assignment Graph
Kazuhisa OKADA Takayuki YAMANOUCHI Takashi KAMBE 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2000/12/25
Vol. E83-A  No. 12 ; pp. 2577-2583
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Layout Synthesis
Keyword: 
celllayoutsynthesissalicideassignment graph
 Summary | Full Text:PDF(581.5KB)

Fabrication and Delay Time Analysis of Deep Submicron CMOS Devices
Yasuo NARA Manabu DEURA Ken-ichi GOTO Tatsuya YAMAZAKI Tetsu FUKANO Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 293-298
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
deep submicronCMOSgate resistancesalicidepropagation delay timeSPICE
 Summary | Full Text:PDF(557.6KB)

Ti Salicide Process for Subquarter-Micron CMOS Devices
Ken-ichi GOTO Tatsuya YAMAZAKI Yasuo NARA Tetsu FUKANO Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 480-485
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
TiTiSi2salicidesubquarter-micron CMOSgate resistance
 Summary | Full Text:PDF(820.9KB)

A Novel CMOS Structure with Polysilicon Source/Drain (PSD) Transistors by Self-Aligned Silicidation
Masahiro SHIMIZU Takehisa YAMAGUCHI Masahide INUISHI Katsuhiro TSUKAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 532-540
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
MOS transistorshallow junctionsalicidetitanium
 Summary | Full Text:PDF(803.6KB)