Keyword : resistive random access memories (ReRAMs)


Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Yusuke KATO Akio OHTA Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 468-474
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memories (ReRAMs)Ti-nanodots (NDs)Si-rich oxide (SiOx)
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