Keyword : process simulation


Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator
Tatsuya EZAKI Takeo IKEZAWA Akio NOTSU Katsuhiko TANAKA Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 409-415
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
atomisticfluctuationprocess simulationdevice simulation
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Three-Dimensional Triangle-Based Simulation of Etching Processes and Applications
Oliver LENHART Eberhard BAR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 427-432
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
process simulationetching3D string algorithmsurface mesh
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Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Eberhard BAR Jurgen LORENZ 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1338-1342
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Numerics
Keyword: 
semiconductor technologyprocess simulationsurface triangulationgrid generation
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TCAD--Yesterday, Today and Tomorrow
Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 791-799
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADdevice simulationprocess simulationIC technologydiffusionion implantationoxidationMOS scalingmodelinghierarchyatomic-scale phenomena
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Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS
Kazuhiko KAI Shigeki KURODA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 129-133
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
process simulationmodel for silicide growthSALICIDEsilicidationtitanium disilicideMOSFET
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Process Simulation for Laser Recrystallization
Bo HU Albert SEIDL Gertraud NEUMAYER Reinhold BUCHNER Karl HABERGER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 138-144
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
process simulationlaser recrystallizationcrystal growthgrain boundarymicro-absorber
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