Keyword : power-added efficiency

Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System
Yuri KUSAKARI Masatoshi MORIKAWA Kazunori ONOZAWA Iwamichi KOHJIRO Isao YOSHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7 ; pp. 1436-1442
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
GSM, RF power MOSFET, 0.45-µm LSI process, power-added efficiency, 
 Summary | Full Text:PDF(1.1MB)
A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12 ; pp. 1586-1591
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
GaAs MESFET, buried channel, ion-implantation, MMIC, power-added efficiency, noise figure, 
 Summary | Full Text:PDF(551.1KB)
Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
Keiko INOSAKO Naotaka IWATA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1241-1245
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
heterojunction FET, power device, low-voltage operation, power-added efficiency, personal digital cellular, adjacent channel leakage power, 
 Summary | Full Text:PDF(357.5KB)