Keyword : power-added efficiency


Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System
Yuri KUSAKARI Masatoshi MORIKAWA Kazunori ONOZAWA Iwamichi KOHJIRO Isao YOSHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7 ; pp. 1436-1442
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
GSMRF power MOSFET0.45-µm LSI processpower-added efficiency
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A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12 ; pp. 1586-1591
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
GaAs MESFETburied channelion-implantationMMICpower-added efficiencynoise figure
 Summary | Full Text:PDF

Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
Keiko INOSAKO Naotaka IWATA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1241-1245
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
heterojunction FETpower devicelow-voltage operationpower-added efficiencypersonal digital cellularadjacent channel leakage power
 Summary | Full Text:PDF