Keyword : power device


Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
Doohyung CHO Kunsik PARK Jongil WON Sanggi KIM Kwansgsoo KIM 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 439-445
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon carbide (SiC)junction termination extension (JTE)edge terminationpower device
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GaN-Based FETs for Microwave Power Amplification
Yi-Feng WU Bernd P. KELLER Stacia KELLER Jane J. XU Brian J. THIBEAULT Steven P. DENBAARS Umesh K. MISHRA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1895-1905
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
GaNFETHEMTpower deviceamplifiermicrowave
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Large-Signal Analysis of Power MOSFETs and Its Application to Device Design
Noriaki MATSUNO Hitoshi YANO Yasuyuki SUZUKI Toshiaki INOUE Tetsu TODA Yasushi KOSE Yoichiro TAKAYAMA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 734-739
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
power deviceMOSFETlarge-signal simulationcellular telephone
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Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
Keiko INOSAKO Naotaka IWATA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1241-1245
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
heterojunction FETpower devicelow-voltage operationpower-added efficiencypersonal digital cellularadjacent channel leakage power
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