Keyword : power amplifier module

A Design of X-Band 40 W Pulse-Driven GaN HEMT Power Amplifier
Hae-Chang JEONG Kyung-Whan YEOM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Vol. E96-C  No. 6 ; pp. 923-934
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
GaN HEMT, power amplifier module, load-pull measurement, pre-match, fixture de-embedding, 
 Summary | Full Text:PDF
A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module
Teruyuki SHIMURA Tomoyuki ASADA Satoshi SUZUKI Takeshi MIURA Jun OTSUJI Ryo HATTORI Yukio MIYAZAKI Kazuya YAMAMOTO Akira INOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/07/01
Vol. E88-C  No. 7 ; pp. 1495-1501
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
GSM/EDGE dual mode, power amplifier module, InGaP HBT, diode switch, Rx-noise, 
 Summary | Full Text:PDF
An Advanced Power Amplifier Module for Quad-Band Wireless Applications
Shuyun ZHANG Pavel BRETCHKO Julius MOKORO Rob McMORROW 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Vol. E86-C  No. 8 ; pp. 1506-1511
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
power amplifier module, closed loop, quad band, Log-Amp, 
 Summary | Full Text:PDF
A High Efficiency GaAs Power Amplifier of 4.6 V Operation for 1.5 GHz Digital Cellular Phone Systems
Akihisa SUGIMURA Kazuki TATEOKA Hidetoshi FURUKAWA Kunihiko KANAZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1237-1240
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
GaAs FET, power amplifier module, high efficiency, adjacent channel leakage power, π/4-shift OPSK signal, 
 Summary | Full Text:PDF