Keyword : poly-Si


Kink Suppression and High Reliability of Asymmetric Dual Channel Poly-Si Thin Film Transistors for High Voltage Bias Stress
Joonghyun PARK Myunghun SHIN 
Publication:   
Publication Date: 2019/01/01
Vol. E102-C  No. 1 ; pp. 95-98
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
poly-SiTFTkinkreliabilityhot carrier stress
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Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization and Metal/Hafnium Oxide Gate Stack on Nonalkaline Glass Substrate
Tatsuya MEGURO Akito HARA 
Publication:   
Publication Date: 2017/01/01
Vol. E100-C  No. 1 ; pp. 94-100
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
poly-SiTFThigh-kHfO2CMOSglass substrate
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Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures
Jun TAYA Kazuki KOJIMA Tomonori MUKUDA Akihiro NAKASHIMA Yuki SAGAWA Tokiyoshi MATSUDA Mutsumi KIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/11/01
Vol. E97-C  No. 11 ; pp. 1068-1073
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
temperature sensorring oscillatorpoly-Sithin-film transistor (TFT)lightly-doped drain structure (LDD)offset drain structure
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Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors for System-on-Glass
Akito HARA Shinya KAMO Tadashi SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/11/01
Vol. E97-C  No. 11 ; pp. 1048-1054
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
poly-SiTFTdouble-gatefour-terminalsystem-on-glass
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Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate
Hiroyuki OGATA Kenji ICHIJO Kenji KONDO Akito HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/02/01
Vol. E96-C  No. 2 ; pp. 285-288
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
poly-SiTFTdouble-gateglass substrate
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Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition
Gou NAKAGAWA Noritoshi SHIBATA Tanemasa ASANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 662-666
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Thin Film Transistors
Keyword: 
poly-SiTFTmetal-induced lateral crystallizationneedle-like SiNi-silicideelectric field
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Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates
Jang Yeon KWON Do Young KIM Hans S. CHO Kyung Bae PARK Ji Sim JUNG Jong Man KIM Young Soo PARK Takashi NOGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 667-671
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Thin Film Transistors
Keyword: 
poly-SiTFTplastic substrate
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Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs
Hiromichi TAKAOKA Yoshinobu SATOU Takaomi SUZUKI Takuya SASAKI Hiroshi TANABE Hiroshi HAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11 ; pp. 1860-1865
Type of Manuscript:  Special Section PAPER (Special Issue on Electronic Displays)
Category: Active Matrix Displays
Keyword: 
excimer lasercrystallizationpoly-Sigrainlateral growthTFT
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Low-Temperature Gate Insulator for Poly-Si Thin Film Transistors by Combination of Photo-Oxidation and Plasma Enhanced Chemical Vapor Deposition Using Tetraethylorthosilicate and O2 Gases
Yukihiko NAKATA Tetsuya OKAMOTO Toshimasa HAMADA Takashi ITOGA Yutaka ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11 ; pp. 1849-1853
Type of Manuscript:  Special Section PAPER (Special Issue on Electronic Displays)
Category: Active Matrix Displays
Keyword: 
oxidationpoly-SiTFTgate insulatorSiO2
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