Keyword : point defects


Modeling of Dopant Diffusion in Silicon
Scott T. DUNHAM Alp H. GENCER Srinivasan CHAKRAVARTHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 800-812
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
dopant diffusionpoint defectssiliconinterstitialvacancydopant/defect pairingcoupled diffusionpair diffusiondiffusivityequilibrium concentrationmetal diffusionlattice Monte Carlo
 Summary | Full Text:PDF(957.6KB)

Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures
Peter PICHLER Rainer SCHORK Thomas KLAUSER Heiner RYSSEL 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 128-137
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
boronantimonydiffusionpoint defectsimplantation enhancement
 Summary | Full Text:PDF(750.4KB)