Keyword : plasma oxidation


Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering
Dae-Hee HAN Shun-ichiro OHMI Tomoyuki SUWA Philippe GAUBERT Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5 ; pp. 413-418
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidation1/f noiseTDDB
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Flattening Process of Si Surface below 1000 Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
Dae-Hee HAN Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 669-673
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidationEOT
 Summary | Full Text:PDF

Study on Magnetic Tunnel Junction
Biao YOU Wenting SHENG Jun DU Wei ZHANG Mu LU An HU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/09/01
Vol. E84-C  No. 9 ; pp. 1202-1206
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology)
Category: 
Keyword: 
magnetic tunnel junctionstunneling magnetoresistanceplasma oxidationinverse TMR
 Summary | Full Text:PDF