Keyword : plasma nitridation


Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films
Shun-ichiro OHMI Tomoki KUROSE Masaki SATOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5 ; pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
electron cyclotron resonancesputteringplasma nitridationpostdeposition annealinghigh-kHfOxNy
 Summary | Full Text:PDF(844.3KB)

Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 30-36
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectricaluminum oxideplasma nitridationfixed chargeMOSFET performance
 Summary | Full Text:PDF(953.8KB)