Keyword : photoemission


STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O2
Masayuki HIRAO Daichi YAMANAKA Takanori YAZAKI Jun OSAKO Hokuto IIJIMA Takao SHIOKAWA Hikota AKIMOTO Takashi MEGURO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/03/01
Vol. E99-C  No. 3 ; pp. 376-380
Type of Manuscript:  Special Section PAPER (Special Section on Progress towards System Nanotechnology)
Category: 
Keyword: 
work functiongallium arsenidenegative electronaffinityphotoemissionphotocathodescanning tunneling microscope
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Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs
Yuta INAGAKI Kazuya HAYASE Ryosuke CHIBA Hokuto IIJIMA Takashi MEGURO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/03/01
Vol. E99-C  No. 3 ; pp. 371-375
Type of Manuscript:  Special Section PAPER (Special Section on Progress towards System Nanotechnology)
Category: 
Keyword: 
Negative electron affinityphotoemissionphotocathodequantum efficiency
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A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission
Toshihiro MATSUDA Hiroaki TAKEUCHI Akira MURAMATSU Hideyuki IWATA Takashi OHZONE Kyoji YAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 811-816
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFETphotoemissionhot carriergate length
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A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
Toshihiro MATSUDA Mari FUNADA Takashi OHZONE Etsumasa KAMEDA Shinji ODANAKA Kyoji TAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1125-1133
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
test structureMOSFEThot carrierphotoemission
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A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs
Toshihiro MATSUDA Naoko MATSUYAMA Kiyomi HOSOI Etsumasa KAMEDA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4 ; pp. 593-601
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFEThot carriersphotoemissionjunction breakdown
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A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS- and Trench-Isolated MOSFETs
Takashi OHZONE Hideyuki IWATA Yukiharu URAOKA Shinji ODANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11 ; pp. 1673-1682
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
CMOShot-carrierphotoemissionisolation
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