Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-CNo. 2 ;
pp. 106-111 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Process Simulation Keyword: transient enhanced diffusion, two-dimension, phosphorus, silicon, shallow junction, furnace annealing,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/04/25 Vol. E76-CNo. 4 ;
pp. 613-625 Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies) Category: Process Technology Keyword: barrier, outdiffusion, phosphorus, polysilicon, titanium nitride, tungsten silicide,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-CNo. 9 ;
pp. 995-1000 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: ion implantation, phosphorus, diffusion, polycrystalline silicon,
