Keyword : oxide

Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Doo-Hee CHO Sang-Hee Ko PARK Shinhyuk YANG Chunwon BYUN Min Ki RYU Jeong-Ik LEE Chi-Sun HWANG Sung Min YOON Hye Yong CHU Kyoung Ik CHO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/11/01
Vol. E92-C  No. 11 ; pp. 1340-1346
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
thin film transistor, oxide, AMOLED, transparent, 
 Summary | Full Text:PDF
RFCV Test Structure Design for a Selected Frequency Range
Wutthinan JEAMSAKSIRI Abdelkarim MERCHA Javier RAMOS Stefaan DECOUTERE Florence CUBAYNES 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 817-823
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
capacitance, CV, gate dielectric, impedance, MOSFET, nitride, oxide, RF, S-parameters, 
 Summary | Full Text:PDF
Elimination of Negative Charge-Up during High Current Ion Implantation
Kazunobu MAMENO Atsuhiro NISHIDA Hideharu NAGASAWA Hideaki FUJIWARA Koji SUZUKI Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 459-463
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
ion implantation, charge-up, electron shower, oxide, dielectric breakdown, 
 Summary | Full Text:PDF
Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation
Kimiaki SHIMOKAWA Takashi USAMI Masaki YOSHIMARU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 473-479
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
water desorption, oxide, PECVD, pore, hot-carrier, interlayer, 
 Summary | Full Text:PDF