Keyword : oxidation


Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)
Shun-ichiro OHMI Go YAMANAKA Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 24-29
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κAlONECRsputteringoxidation
 Summary | Full Text:PDF(1.3MB)

Low-Temperature Gate Insulator for Poly-Si Thin Film Transistors by Combination of Photo-Oxidation and Plasma Enhanced Chemical Vapor Deposition Using Tetraethylorthosilicate and O2 Gases
Yukihiko NAKATA Tetsuya OKAMOTO Toshimasa HAMADA Takashi ITOGA Yutaka ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11 ; pp. 1849-1853
Type of Manuscript:  Special Section PAPER (Special Issue on Electronic Displays)
Category: Active Matrix Displays
Keyword: 
oxidationpoly-SiTFTgate insulatorSiO2
 Summary | Full Text:PDF(665.4KB)

TCAD--Yesterday, Today and Tomorrow
Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 791-799
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADdevice simulationprocess simulationIC technologydiffusionion implantationoxidationMOS scalingmodelinghierarchyatomic-scale phenomena
 Summary | Full Text:PDF(482.5KB)

High-Quality Low-Dose SIMOX Wafers
Sadao NAKASHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 364-369
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Wafer Technologies
Keyword: 
SOISIMOXannealingoxidationSi
 Summary | Full Text:PDF(487.1KB)

Reaction of H-Terminated Si(100) Surfaces with Oxidizer in the Heating and Cooling Process
Norikuni YABUMOTO Yukio KOMINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7 ; pp. 770-773
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
siliconsurfaceoxidationhydrogen-terminationthermal desorption spectroscopy
 Summary | Full Text:PDF(328.4KB)

Initial Stage of SiO2/Si Interface Formation on Si(111) Surface
Hiroshi NOHIRA Yoshinari TAMURA Hiroki OGAWA Takeo HATTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7 ; pp. 757-763
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
oxidationsiliconH-terminationXPS
 Summary | Full Text:PDF(612.4KB)

Numerical Techniques on Enhancing Robustness for Stress-Dependent Oxidation Simulation Using Finite Element Method in SUPREM-IV
Yoshinori ODA Kaung-Shia YU Thye-Lai TUNG Arthur RAEFSKY Donald L. SCHARFETTER Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 150-155
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
simulationoxidationfinite element methodstress
 Summary | Full Text:PDF(539.6KB)