IEICE Trans

Keyword : nonvolatile memory

Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO₂ Utilizing Pt Gate Electrodes Min Gee KIM Masakazu KATAOKA Rengie Mark D. MAILIG Shun-ichiro OHMI
Publication: Publication Date: 2020/06/01 Vol. E103-C No. 6 ; pp. 280-285 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Electronic Materials Keyword: ferroelectrics, nondoped HfO₂, MFSFET, nonvolatile memory,
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A Cost-Effective 1T-4MTJ Embedded MRAM Architecture with Voltage Offset Self-Reference Sensing Scheme for IoT Applications Masanori HAYASHIKOSHI Hiroaki TANIZAKI Yasumitsu MURAI Takaharu TSUJI Kiyoshi KAWABATA Koji NII Hideyuki NODA Hiroyuki KONDO Yoshio MATSUDA Hideto HIDAKA
Publication: Publication Date: 2019/04/01 Vol. E102-C No. 4 ; pp. 287-295 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology) Category: Keyword: nonvolatile memory, magnetic memory, memory architecture,
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New Multiple-Times Programmable CMOS ROM Cell In-Young CHUNG Seong Yeol JEONG Sung Min SEO Myungjin LEE Taesu JANG Seon-Yong CHA Young June PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/06/01 Vol. E95-C No. 6 ; pp. 1098-1103 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: CMOS memory, ROM, FN stress, nonvolatile memory,
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Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride–Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring Woo Young KIM Hee Chul LEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 ; pp. 860-864 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: ferroelectric polymer, poly(vinylidene fluoride–trifluoroethylene), P(VDF-TrFE), flexible substrate, nonvolatile memory,
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Design of an 8-nsec 72-bit-Parallel-Search Content-Addressable Memory Using a Phase-Change Device Satoru HANZAWA Takahiro HANYU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/08/01 Vol. E94-C No. 8 ; pp. 1302-1310 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: content addressable memory, CAM, parallel search, phase-change device, one-hot coding, nonvolatile memory,
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SONOS-Type Flash Memory with HfO₂ Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition Jae Sub OH Kwang Il CHOI Young Su KIM Min Ho KANG Myeong Ho SONG Sung Kyu LIM Dong Eun YOO Jeong Gyu PARK Hi Deok LEE Ga Won LEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 ; pp. 590-595 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: SONOS, SOHOS, flash memory, high-k, HfO₂, nonvolatile memory, Atomic Layer Deposition,
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Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide Toshihiro MATSUDA Shinsuke ISHIMARU Shingo NOHARA Hideyuki IWATA Kiyotaka KOMOKU Takayuki MORISHITA Takashi OHZONE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/12/01 Vol. E92-C No. 12 ; pp. 1523-1530 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: MOS capacitors, Si-implantation, thermal oxide, I-V hysteresis, hysteresis window, nonvolatile memory,
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Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate Kuk-Hwan KIM Hyunjin LEE Yang-Kyu CHOI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/05/01 Vol. E89-C No. 5 ; pp. 578-584 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: MONOS, SONOS, Fowler-Nordheim tunneling, flash memory, asymmetric double gate, nonvolatile memory,
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A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory Shoichi MASUI Toshiyuki TERAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 ; pp. 601-607 Type of Manuscript: INVITED PAPER (Special Section on Low-Power LSI and Low-Power IP) Category: Keyword: radio frequency identification, wireless communication, nonvolatile memory, ferroelectric random access memory, low power design,
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Design and Application of Ferroelectric Memory Based Nonvolatile SRAM Shoichi MASUI Tsuzumi NINOMIYA Takashi OHKAWA Michiya OURA Yoshimasa HORII Nobuhiro KIN Koichiro HONDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/11/01 Vol. E87-C No. 11 ; pp. 1769-1776 Type of Manuscript: INVITED PAPER (Special Section on New System Paradigms for Integrated Electronics) Category: Keyword: ferroelectric material, nonvolatile memory, programming, SoC, programmable logic devices,
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A Rewritable CMOS-FUSE for System-on-Chip with a Differential Cell Architecture in a 0.13 µm CMOS Logic Process Hiroyuki YAMAUCHI Yasuhiro AGATA Masanori SHIRAHAMA Toshiaki KAWASAKI Ryuji NISHIHARA Kazunari TAKAHASHI Hirohito KIKUKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/10/01 Vol. E87-C No. 10 ; pp. 1664-1672 Type of Manuscript: Special Section PAPER (Special Section on New Era of Nonvolatile Memories) Category: CMOS Fuse Keyword: nonvolatile memory, data retention, fuse, CMOS compatible,
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Half-V_cc Plate Nonvolatile DRAMs with Ferroelectric Capacitors Kan TAKEUCHI Katsumi MATSUNO Yoshinobu NAKAGOME Masakazu AOKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/02/25 Vol. E79-C No. 2 ; pp. 234-242 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: ferroelectric memory, DRAM, half-V _cc plate, nonvolatile memory,
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A Novel Threshold Voltage Distribution Measuring Technique for Flash EEPROM Devices Toshihiko HIMENO Naohiro MATSUKAWA Hiroaki HAZAMA Koji SAKUI Masamitsu OSHIKIRI Kazunori MASUDA Kazushige KANDA Yasuo ITOH Jin-ichi MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/02/25 Vol. E79-C No. 2 ; pp. 145-151 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Device and Circuit Characterization Keyword: flash memory, V_th distribution, reliability, NAND flash, nonvolatile memory,
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