Keyword : nonvolatile memory


A Cost-Effective 1T-4MTJ Embedded MRAM Architecture with Voltage Offset Self-Reference Sensing Scheme for IoT Applications
Masanori HAYASHIKOSHI Hiroaki TANIZAKI Yasumitsu MURAI Takaharu TSUJI Kiyoshi KAWABATA Koji NII Hideyuki NODA Hiroyuki KONDO Yoshio MATSUDA Hideto HIDAKA 
Publication:   
Publication Date: 2019/04/01
Vol. E102-C  No. 4 ; pp. 287-295
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
nonvolatile memorymagnetic memorymemory architecture
 Summary | Full Text:PDF

New Multiple-Times Programmable CMOS ROM Cell
In-Young CHUNG Seong Yeol JEONG Sung Min SEO Myungjin LEE Taesu JANG Seon-Yong CHA Young June PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/06/01
Vol. E95-C  No. 6 ; pp. 1098-1103
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
CMOS memoryROMFN stressnonvolatile memory
 Summary | Full Text:PDF

Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride–Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring
Woo Young KIM Hee Chul LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 860-864
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ferroelectric polymerpoly(vinylidene fluoride–trifluoroethylene)P(VDF-TrFE)flexible substratenonvolatile memory
 Summary | Full Text:PDF

Design of an 8-nsec 72-bit-Parallel-Search Content-Addressable Memory Using a Phase-Change Device
Satoru HANZAWA Takahiro HANYU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/08/01
Vol. E94-C  No. 8 ; pp. 1302-1310
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
content addressable memoryCAMparallel searchphase-change deviceone-hot codingnonvolatile memory
 Summary | Full Text:PDF

SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition
Jae Sub OH Kwang Il CHOI Young Su KIM Min Ho KANG Myeong Ho SONG Sung Kyu LIM Dong Eun YOO Jeong Gyu PARK Hi Deok LEE Ga Won LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 590-595
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
SONOSSOHOSflash memoryhigh-kHfO2nonvolatile memoryAtomic Layer Deposition
 Summary | Full Text:PDF

Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
Toshihiro MATSUDA Shinsuke ISHIMARU Shingo NOHARA Hideyuki IWATA Kiyotaka KOMOKU Takayuki MORISHITA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12 ; pp. 1523-1530
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOS capacitorsSi-implantationthermal oxideI-V hysteresishysteresis windownonvolatile memory
 Summary | Full Text:PDF

Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate
Kuk-Hwan KIM Hyunjin LEE Yang-Kyu CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5 ; pp. 578-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
MONOSSONOSFowler-Nordheim tunnelingflash memoryasymmetric double gatenonvolatile memory
 Summary | Full Text:PDF

A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory
Shoichi MASUI Toshiyuki TERAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 601-607
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power LSI and Low-Power IP)
Category: 
Keyword: 
radio frequency identificationwireless communicationnonvolatile memoryferroelectric random access memorylow power design
 Summary | Full Text:PDF

Design and Application of Ferroelectric Memory Based Nonvolatile SRAM
Shoichi MASUI Tsuzumi NINOMIYA Takashi OHKAWA Michiya OURA Yoshimasa HORII Nobuhiro KIN Koichiro HONDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/11/01
Vol. E87-C  No. 11 ; pp. 1769-1776
Type of Manuscript:  INVITED PAPER (Special Section on New System Paradigms for Integrated Electronics)
Category: 
Keyword: 
ferroelectric materialnonvolatile memoryprogrammingSoCprogrammable logic devices
 Summary | Full Text:PDF

A Rewritable CMOS-FUSE for System-on-Chip with a Differential Cell Architecture in a 0.13 µm CMOS Logic Process
Hiroyuki YAMAUCHI Yasuhiro AGATA Masanori SHIRAHAMA Toshiaki KAWASAKI Ryuji NISHIHARA Kazunari TAKAHASHI Hirohito KIKUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10 ; pp. 1664-1672
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: CMOS Fuse
Keyword: 
nonvolatile memorydata retentionfuseCMOS compatible
 Summary | Full Text:PDF

A Novel Threshold Voltage Distribution Measuring Technique for Flash EEPROM Devices
Toshihiko HIMENO Naohiro MATSUKAWA Hiroaki HAZAMA Koji SAKUI Masamitsu OSHIKIRI Kazunori MASUDA Kazushige KANDA Yasuo ITOH Jin-ichi MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 145-151
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
flash memoryVth distributionreliabilityNAND flashnonvolatile memory
 Summary | Full Text:PDF

Half-Vcc Plate Nonvolatile DRAMs with Ferroelectric Capacitors
Kan TAKEUCHI Katsumi MATSUNO Yoshinobu NAKAGOME Masakazu AOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 234-242
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
ferroelectric memoryDRAMhalf-V cc platenonvolatile memory
 Summary | Full Text:PDF