Keyword : nitride


Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode
Kiichi KAMIMURA Hiroaki SHIOZAWA Tomohiko YAMAKAMI Rinpei HAYASHIBE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12 ; pp. 1470-1474
Type of Manuscript:  Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
Category: Fundamentals for Nanodevices
Keyword: 
SiCnitrideinterfaceMIS Schottky
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White Light-Emitting Diode Lamps Using Oxynitride and Nitride Phosphor Materials
Ken SAKUMA Naoto HIROSAKI Naoki KIMURA Masakazu OHASHI Rong-Jun XIE Yoshinobu YAMAMOTO Takayuki SUEHIRO Kenichiro ASANO Daiichiro TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/11/01
Vol. E88-C  No. 11 ; pp. 2057-2064
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
light-emitting diodephosphornitrideillumination
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RFCV Test Structure Design for a Selected Frequency Range
Wutthinan JEAMSAKSIRI Abdelkarim MERCHA Javier RAMOS Stefaan DECOUTERE Florence CUBAYNES 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 817-823
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
capacitanceCVgate dielectricimpedanceMOSFETnitrideoxideRFS-parameters
 Summary | Full Text:PDF