Keyword : multilevel


A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology
Hideaki KURATA Satoshi NODA Yoshitaka SASAGO Kazuo OTSUGA Tsuyoshi ARIGANE Tetsufumi KAWAMURA Takashi KOBAYASHI Hitoshi KUME Kazuki HOMMA Teruhiko ITO Yoshinori SAKAMOTO Masahiro SHIMIZU Yoshinori IKEDA Osamu TSUCHIYA Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/11/01
Vol. E90-C  No. 11 ; pp. 2146-2156
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memorymultilevelinversion-layer-bit-lineAG-AND
 Summary | Full Text:PDF

A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput
Hideaki KURATA Shunichi SAEKI Takashi KOBAYASHI Yoshitaka SASAGO Tsuyoshi ARIGANE Keiichi YOSHIDA Yoshinori TAKASE Takayuki YOSHITAKE Osamu TSUCHIYA Yoshinori IKEDA Shunichi NARUMI Michitaro KANAMITSU Kazuto IZAWA Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/10/01
Vol. E89-C  No. 10 ; pp. 1469-1479
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memoryAG-ANDmultilevelhigh speed programmingCCIP
 Summary | Full Text:PDF

Trends in High-Density Flash Memory Technologies
Takashi KOBAYASHI Hideaki KURATA Katsutaka KIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10 ; pp. 1656-1663
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Flash Memory
Keyword: 
flash memoryhigh densityAG-ANDmultilevelhigh-speed programming
 Summary | Full Text:PDF

Forward Bias Enhanced Channel Hot Electron Injection for Low-Level Programming Improvement in Multilevel Flash Memory
Caleb Yu-Sheng CHO Ming-Jer CHEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/07/01
Vol. E87-C  No. 7 ; pp. 1204-1207
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memorymultilevelstaircase programming
 Summary | Full Text:PDF