Keyword : multi-gate devices


Independent-Double-Gate FinFET SRAM Technology
Kazuhiko ENDO Shin-ichi OUCHI Takashi MATSUKAWA Yongxun LIU Meishoku MASAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/04/01
Vol. E96-C  No. 4 ; pp. 413-423
Type of Manuscript:  INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
multi-gate devicesFinFETSRAMnoise margin
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