| Keyword : modeling
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An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language An-Sam PENG Lin-Kun WU | Publication:
Publication Date: 2017/05/01
Vol. E100-C
No. 5 ;
pp. 424-429
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Keyword: pHEMT, noise parameters, modeling, EEHEMT, | | Summary | Full Text:PDF(668.2KB) | |
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An Analytical Model of AC-DC Charge Pump Voltage Multipliers Toru TANZAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2016/01/01
Vol. E99-C
No. 1 ;
pp. 108-118
Type of Manuscript:
PAPER
Category: Integrated Electronics Keyword: AC-DC, charge pump, modeling, multiplier, rectifier, RF-DC, | | Summary | Full Text:PDF(1.3MB) | |
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Substrate Coupling Simulation Suitable for Conventional CAD Tools Tomohisa KIMURA | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2003/02/01
Vol. E86-A
No. 2 ;
pp. 419-423
Type of Manuscript:
Special Section LETTER (Special Section on Analog Circuit Techniques and Related Topics)
Category: Keyword: substrate coupling, simulation, modeling, CAD, test chip, | | Summary | Full Text:PDF(471.3KB) | |
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An Efficient Reduction Method of a Substrate RC Network Model Tomohisa KIMURA Makiko OKUMURA | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/03/01
Vol. E84-A
No. 3 ;
pp. 698-704
Type of Manuscript:
Special Section PAPER (Special Section of Selected Papers from the 13th Workshop on Circuits and Systems in Karuizawa)
Category: Keyword: substrate coupling, modeling, circuit simulation, model reduction, | | Summary | Full Text:PDF(383.6KB) | |
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TCAD--Yesterday, Today and Tomorrow Robert W. DUTTON | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C
No. 6 ;
pp. 791-799
Type of Manuscript:
INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: Keyword: TCAD, device simulation, process simulation, IC technology, diffusion, ion implantation, oxidation, MOS scaling, modeling, hierarchy, atomic-scale phenomena, | | Summary | Full Text:PDF(482.5KB) | |
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A Model for Stream Overflows in Circuit-Switched Communication Networks Ramesh BHANDARI | Publication: IEICE TRANSACTIONS on Communications
Publication Date: 1997/02/25
Vol. E80-B
No. 2 ;
pp. 324-331
Type of Manuscript:
Special Section PAPER (Special Issue on Telecommunications Network Planning and Design)
Category: Network performance and traffic theory Keyword: circuit-switched networks, non random traffic, overflows, modeling, | | Summary | Full Text:PDF(570.1KB) | |
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Signal-Controlled Tim-Series Modeling Based on ARMA Blocks, and Separation of Superimposed, Overlapping Spectra Signals Eugene I.PLOTKIN | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1996/10/25
Vol. E79-A
No. 10 ;
pp. 1676-1681
Type of Manuscript:
Special Section PAPER (Special Section on Nonlinear Theory and its Applications (NOLTA))
Category: Sequence, Time Series and Applications Keyword: structural signal processing, estimation, modeling, | | Summary | Full Text:PDF(481.9KB) | |
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An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation Shigeru WATANABE Yuji ODA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1996/05/25
Vol. E79-C
No. 5 ;
pp. 606-610
Type of Manuscript:
Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
Category: Active Devices Keyword: GaAs, FET, microwave, equivalent clrcuit, modeling, simulation, | | Summary | Full Text:PDF(350.2KB) | |
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An Analytical Modeling of Three Primary Wiring Capacitance Components for Multi-Layer Interconnect Structure Susumu KUROSAWA | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1995/12/25
Vol. E78-A
No. 12 ;
pp. 1793-1798
Type of Manuscript:
Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Keyword: capacitance, modeling, interconnect, LSI, LPE, | | Summary | Full Text:PDF(417.8KB) | |
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Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon Masami HANE Shinya HASEGAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C
No. 2 ;
pp. 112-117
Type of Manuscript:
Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation Keyword: poly-silicon, diffusion, modeling, simulation, | | Summary | Full Text:PDF(425.4KB) | |
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A Study on Modeling of the Motion Compensation Prediction Error Signal Yoshiaki SHISHIKUI | Publication: IEICE TRANSACTIONS on Communications
Publication Date: 1992/05/25
Vol. E75-B
No. 5 ;
pp. 368-376
Type of Manuscript:
Special Section PAPER (Special Issue on Video Coding and Its Applications)
Category: Keyword: motion compensation, modeling, interlace scanned signal, | | Summary | Full Text:PDF(718KB) | |
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