Keyword : metallization


Thermal Stability of W2N Compound Barrier in W/W2N/poly-Si Gate Electrode Configuration
Atsushi NOYA Mayumi B. TAKEYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/11/01
Vol. E86-C  No. 11 ; pp. 2332-2335
Type of Manuscript:  LETTER
Category: Electronic Materials
Keyword: 
metallizationMOSgate electrodeWNx
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Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration
Atsushi NOYA Mayumi B. TAKEYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/05/01
Vol. E84-C  No. 5 ; pp. 704-706
Type of Manuscript:  LETTER
Category: Electronic Materials
Keyword: 
metallizationMOSgate electrodeZrN
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A 0.25-µm BiCMOS Technology Using SOR X-Ray Lithography
Shinsuke KONAKA Hakaru KYURAGI Toshio KOBAYASHI Kimiyoshi DEGUCHI Eiichi YAMAMOTO Shigehisa OHKI Yousuke YAMAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 355-361
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
BiCMOSX-ray lithographySORself-aligned bipolarmetallization
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Via Electromigration Characteristics in Aluminum Based Multilevel Interconnection
Takahisa YAMAHA Masaru NAITO Tadahiko HOTTA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/01/25
Vol. E77-A  No. 1 ; pp. 187-194
Type of Manuscript:  Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
Keyword: 
reliabilityelectromigrationmetallizationvia contactmultilevel interconnectionlaminated interconnectionsaluminum
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