Keyword : maximum oscillation frequency


E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
Issei WATANABE Akira ENDOH Takashi MIMURA Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1251-1257
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InGaAs/InAlAs HEMTE-band LNA-MMICmaximum oscillation frequencycurrent-gain cutoff frequencyminimum noise figure
 Summary | Full Text:PDF(845.1KB)

High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation
Shoji YAMAHATA Yutaka MATSUOKA Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1437-1443
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
heterojunction bipolar transistorcollector-up structurecarbon-doped baseoxygen-ion implantationmaximum oscillation frequency
 Summary | Full Text:PDF(547.6KB)

IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs
Yutaka MATSUOKA Shoji YAMAHATA Satoshi YAMAGUCHI Koichi MURATA Eiichi SANO Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1392-1401
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
heterojunction bipolar transistorself-aligned structureballistic collection transistorlaunchercutoff frequencymaximum oscillation frequencymultiplexerpreamplifierselectorfrequency divider
 Summary | Full Text:PDF(1.2MB)