Keyword : long purge

Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
Takaaki KAWAHARA Kazuyoshi TORII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 2-8
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
CMOSFEThigh-κ gate dielectricHfO2atomic layer depositionlong purgeimpuritygate leakage current
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