Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C
No. 4 ;
pp. 564-571
Type of Manuscript:
Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category:
Keyword:
6T/8T-SRAM, asymmetric pass gate transistor, local electron injection, disturb/write margin, read speed, |