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TCAD--Yesterday, Today and Tomorrow Robert W. DUTTON | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C
No. 6 ;
pp. 791-799
Type of Manuscript:
INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: Keyword: TCAD, device simulation, process simulation, IC technology, diffusion, ion implantation, oxidation, MOS scaling, modeling, hierarchy, atomic-scale phenomena, | | Summary | Full Text:PDF(482.5KB) | |
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Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree Hannes STIPPEL Siegfried SELBERHERR | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C
No. 2 ;
pp. 118-123
Type of Manuscript:
Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation Keyword: ion implantation, Monte Carlo method, point location, octree, | | Summary | Full Text:PDF(472.4KB) | |
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