Keyword : ion implantation


A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Alexander BURENKOV Klaus TIETZEL Andreas HOSSINGER Jurgen LORENZ Heiner RYSSEL Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1259-1266
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword: 
ion implantationthree-dimensionalMonte-Carloanalyticalsimulation
 Summary | Full Text:PDF(1.9MB)

TCAD--Yesterday, Today and Tomorrow
Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 791-799
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADdevice simulationprocess simulationIC technologydiffusionion implantationoxidationMOS scalingmodelinghierarchyatomic-scale phenomena
 Summary | Full Text:PDF(482.5KB)

Improvement of Etching Selectivity to Photoresist for Al Dry Etching by Using Ion Implantation
Keiichi UEDA Kiyoshi SHIBATA Kazunobu MAMENO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/03/25
Vol. E79-C  No. 3 ; pp. 382-384
Type of Manuscript:  Special Section LETTER (Special Issue on Scientific ULSI Manufacturing Technology)
Category: High-Performance Processing
Keyword: 
Photoresistion implantationdry etchingresist selectivity
 Summary | Full Text:PDF(287.3KB)

Quantitative Charge Build-Up Evaluation Technique by Using MOS Capacitors with Charge Collecting Electrodes in Wafer Processing
Hiroki KUBO Takashi NAMURA Kenji YONEDA Hiroshi OHISHI Yoshihiro TODOKORO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 198-205
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Reliability Analysis
Keyword: 
antenna capacitorcharge build-upcharge to breakdownion implantation
 Summary | Full Text:PDF(782.5KB)

Temperature Compensated Piezoresistor Fabricated by High Energy Ion Implantation
Takahiro NISHIMOTO Shuichi SHOJI Kazuyuki MINAMI Masayoshi ESASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2 ; pp. 152-156
Type of Manuscript:  Special Section PAPER (Special Issue on Micromachines and Micro Electro Mechanical Systems)
Category: 
Keyword: 
piezoresistorion implantationtemperature compensationJFET
 Summary | Full Text:PDF(364.5KB)

Elimination of Negative Charge-Up during High Current Ion Implantation
Kazunobu MAMENO Atsuhiro NISHIDA Hideharu NAGASAWA Hideaki FUJIWARA Koji SUZUKI Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 459-463
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
ion implantationcharge-upelectron showeroxidedielectric breakdown
 Summary | Full Text:PDF(507.1KB)

Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree
Hannes STIPPEL Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 118-123
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
ion implantationMonte Carlo methodpoint locationoctree
 Summary | Full Text:PDF(472.4KB)

Half-Micron LOCOS Isolation Using High Energy Ion Implantation
Koji SUZUKI Kazunobu MAMENO Hideharu NAGASAWA Atsuhiro NISHIDA Hideaki FUJIWARA Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 972-977
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
ion implantationLOCOSisolationchannel stopITF
 Summary | Full Text:PDF(519.5KB)

Diffusion of Phosphorus in Poly/Single Crystalline Silicon
Hideaki FUJIWARA Hideharu NAGASAWA Atsuhiro NISHIDA Koji SUZUKI Kazunobu MAMENO Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 995-1000
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
ion implantationphosphorusdiffusionpolycrystalline silicon
 Summary | Full Text:PDF(594.9KB)