IEICE Trans

Keyword : ion implantation

A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation Alexander BURENKOV Klaus TIETZEL Andreas HOSSINGER Jurgen LORENZ Heiner RYSSEL Siegfried SELBERHERR
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-C No. 8 ; pp. 1259-1266 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Process Modeling and Simulation Keyword: ion implantation, three-dimensional, Monte-Carlo, analytical, simulation,
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TCAD--Yesterday, Today and Tomorrow Robert W. DUTTON
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 791-799 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: TCAD, device simulation, process simulation, IC technology, diffusion, ion implantation, oxidation, MOS scaling, modeling, hierarchy, atomic-scale phenomena,
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Improvement of Etching Selectivity to Photoresist for Al Dry Etching by Using Ion Implantation Keiichi UEDA Kiyoshi SHIBATA Kazunobu MAMENO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/03/25 Vol. E79-C No. 3 ; pp. 382-384 Type of Manuscript: Special Section LETTER (Special Issue on Scientific ULSI Manufacturing Technology) Category: High-Performance Processing Keyword: Photoresist, ion implantation, dry etching, resist selectivity,
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Quantitative Charge Build-Up Evaluation Technique by Using MOS Capacitors with Charge Collecting Electrodes in Wafer Processing Hiroki KUBO Takashi NAMURA Kenji YONEDA Hiroshi OHISHI Yoshihiro TODOKORO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/02/25 Vol. E79-C No. 2 ; pp. 198-205 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Reliability Analysis Keyword: antenna capacitor, charge build-up, charge to breakdown, ion implantation,
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Temperature Compensated Piezoresistor Fabricated by High Energy Ion Implantation Takahiro NISHIMOTO Shuichi SHOJI Kazuyuki MINAMI Masayoshi ESASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/02/25 Vol. E78-C No. 2 ; pp. 152-156 Type of Manuscript: Special Section PAPER (Special Issue on Micromachines and Micro Electro Mechanical Systems) Category: Keyword: piezoresistor, ion implantation, temperature compensation, JFET,
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Elimination of Negative Charge-Up during High Current Ion Implantation Kazunobu MAMENO Atsuhiro NISHIDA Hideharu NAGASAWA Hideaki FUJIWARA Koji SUZUKI Kiyoshi YONEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/25 Vol. E77-C No. 3 ; pp. 459-463 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Process Technology Keyword: ion implantation, charge-up, electron shower, oxide, dielectric breakdown,
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Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree Hannes STIPPEL Siegfried SELBERHERR
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-C No. 2 ; pp. 118-123 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Process Simulation Keyword: ion implantation, Monte Carlo method, point location, octree,
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Half-Micron LOCOS Isolation Using High Energy Ion Implantation Koji SUZUKI Kazunobu MAMENO Hideharu NAGASAWA Atsuhiro NISHIDA Hideaki FUJIWARA Kiyoshi YONEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 ; pp. 972-977 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: ion implantation, LOCOS, isolation, channel stop, ITF,
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Diffusion of Phosphorus in Poly/Single Crystalline Silicon Hideaki FUJIWARA Hideharu NAGASAWA Atsuhiro NISHIDA Koji SUZUKI Kazunobu MAMENO Kiyoshi YONEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 ; pp. 995-1000 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: ion implantation, phosphorus, diffusion, polycrystalline silicon,
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