Keyword : in-situ doping

Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor
Makoto AKIZUKI Masaki HIRASE Atsushi SAITA Hiroyuki AOE Atsumasa DOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 1007-1012
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
MOS capacitorspolycystalline siliconamorphous siliconstressin-situ dopinggate oxideconstant current stressdielectric breakdowntrapped charge
 Summary | Full Text:PDF(601.9KB)