Keyword : impact ionization


Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs
Kazuya NISHIHORI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/08/01
Vol. E90-C  No. 8 ; pp. 1643-1649
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
GaAs MESFETburied-p-typep-pocket-typeI-V kinkimpact ionizationhole accumulation
 Summary | Full Text:PDF(366.5KB)

Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT
Yoshifumi KAWAKAMI Naohiro KUZE Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2039-2042
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN HEMTdevice simulationcut-off frequencydrain breakdown voltageimpact ionization
 Summary | Full Text:PDF(500.7KB)

Highly Efficient Electron Emissions from Single-Crystalline CVD Diamond Surfaces
Toshimichi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/05/01
Vol. E86-C  No. 5 ; pp. 797-802
Type of Manuscript:  Special Section PAPER (Special Issue on Field Electron Emission from Carbon Materials)
Category: 
Keyword: 
CVD diamondelectron emissionimpact ionizationhigh efficiency
 Summary | Full Text:PDF(531.2KB)

Efficient Full-Band Monte Carlo Simulation of Silicon Devices
Christoph JUNGEMANN Stefan KEITH Martin BARTELS Bernd MEINERZHAGEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 870-879
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
siliconfull-band Monte Carlomicroscopic relaxation timevelocity overshootimpact ionizationdrift-diffusiondeep submicron NMOSFET
 Summary | Full Text:PDF(766.3KB)

A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation
Morikazu TSUNO Shin YOKOYAMA Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12 ; pp. 1913-1917
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETlow temperaturevelocity overshootSbnonsteady-stationary effectimpact ionizationhot-carrier
 Summary | Full Text:PDF(491.7KB)

A non-Local Formulation of Impact Ionization for Silicon
Paul G. SCROBOHACI Ting-wei TANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 134-138
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
impact ionizationhigh energy subpopulationself-consistent Monte-Carlo
 Summary | Full Text:PDF(309.3KB)