Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C
No. 7 ;
pp. 1042-1049
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Wide Bandgap Devices
Keyword:
diamond, field-effect transistors, RF characteristics, equivalent circuit, hydrogen-surface termination, |
