Keyword : hole-trapping


Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions
Chenyue MA Hans Jürgen MATTAUSCH Masataka MIYAKE Takahiro IIZUKA Kazuya MATSUZAWA Seiichiro YAMAGUCHI Teruhiko HOSHIDA Akinori KINOSHITA Takahiko ARAKAWA Jin HE Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/10/01
Vol. E96-C  No. 10 ; pp. 1339-1347
Type of Manuscript:  PAPER
Category: Electronic Components
Keyword: 
NBTI effectinterface-statehole-trappingmodeling
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