Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C
No. 10 ;
pp. 2051-2057
Type of Manuscript:
Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category:
Keyword:
Cu-gate, AlGaN/GaN, high electron mobility transistor, gate leakage current, high-temperature stability, |
