Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C
No. 8 ;
pp. 1327-1331
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword:
AlGaN/GaN MIS-HFET, K-band, power amplifier, Si substrate, high-temperature chemical vapor deposition SiN, |
