Keyword : high-k


In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering
Shun-ichiro OHMI Shin ISHIMATSU Yuske HORIUCHI Sohya KUDOH 
Publication:   
Publication Date: 2020/06/01
Vol. E103-C  No. 6 ; pp. 299-303
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Semiconductor Materials and Devices
Keyword: 
high-kgate insulatorinterfacial layernitridationN2-plasmaECRHfN
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Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization and Metal/Hafnium Oxide Gate Stack on Nonalkaline Glass Substrate
Tatsuya MEGURO Akito HARA 
Publication:   
Publication Date: 2017/01/01
Vol. E100-C  No. 1 ; pp. 94-100
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
poly-SiTFThigh-kHfO2CMOSglass substrate
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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Min LIAO Hiroshi ISHIWARA Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 885-890
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneOFETshigh-kgrain sizeHfON
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Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films
Shun-ichiro OHMI Tomoki KUROSE Masaki SATOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5 ; pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
electron cyclotron resonancesputteringplasma nitridationpostdeposition annealinghigh-kHfOxNy
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Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs
Takeo MATSUKI Kazuyoshi TORII Takeshi MAEDA Yasushi AKASAKA Kiyoshi HAYASHI Naoki KASAI Tsunetoshi ARIKADO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 804-810
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFEThigh-kmetal-gategate-last
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Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process
Kimihiro SASAKI Kentaro KAWAI Tatsuhiro HASU Makoto YABUUCHI Tomonobu HATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/02/01
Vol. E87-C  No. 2 ; pp. 218-222
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Oxide Thin Films by Sputtering)
Category: 
Keyword: 
reactive sputteringgate insulatorZrO2high-k
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