Keyword : high-k dielectrics


Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki HASHIMOTO Akio OHTA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 674-679
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Ge-channelhigh-k dielectricsinterfacial control layerX-ray photoelectron spectroscopyenergy band alignment
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Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation
Hideki MURAKAMI Wataru MIZUBAYASHI Hirokazu YOKOI Atsushi SUYAMA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 640-645
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
high-k dielectricsaluminum oxidereliabilityMISFET
 Summary | Full Text:PDF