Keyword : high-electron-mobility transistor (HEMT)


Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer
Mitsuhiro HANABE Yahya Moubarak MEZIANI Taiichi OTSUJI Eiichi SANO Tanemasa ASANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 949-954
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
terahertzplasmon resonanceplasma instabilityheterostructurehigh-electron-mobility transistor (HEMT)
 Summary | Full Text:PDF(852.6KB)

Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs
Arvydas MATULIONIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 913-920
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
GaNAlGaNhigh-electron-mobility transistor (HEMT)two-dimensional electron gas (2DEG)microwave frequency
 Summary | Full Text:PDF(322.9KB)